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ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package for high volume, pick and place assembly requirements. * High Figure of Merit Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz * Guaranteed Capacitance Range * Dual Diodes - Save Space and Reduce Cost * Surface Mount Package * Available in 8 mm Tape and Reel * Monolithic Chip Provides Improved Matching - Guaranteed 1.0% (Max) Over Specified Tuning Range
MAXIMUM RATINGS (Each Diode)
Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 14 200 225 1.8 +125 -55 to +125 Unit Vdc mAdc mW mW/C C C
MMBV432LT1
ON Semiconductor Preferred Device
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
3 1 2
CASE 318-08, STYLE 9 SOT-23 (TO-236AB)
1 3
2
DEVICE MARKING
MMBV432LT1 = M4B
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 9.0 Vdc) Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) Capacitance Ratio C2/C8 (f = 1.0 MHz) Figure of Merit (VR = 2.0 Vdc, f = 100 MHz) Symbol V(BR)R IR CT CR Q Min 14 -- 43 1.5 100 Typ -- -- -- -- 150 Max -- 100 48.1 2.0 -- Unit Vdc nAdc pF -- --
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 2
Publication Order Number: MMBV432LT1/D
MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 50 Q, FIGURE OF MERIT 550 450 350 250 150 10 50 TA = 25C f = 100 MHz
30 20 f = 1.0 MHz TA = 25C
1
2
3
5
7
10
0
2
4
6
8
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
2000 1000 Q, FIGURE OF MERIT 500 200 100 50 20 10 VR = 2.0 Vdc TA = 25C 1.06 1.04 1.02 1.00 0.98 0.96 -75
Figure 2. Figure of Merit versus Voltage
CT , DIODE CAPACITANCE (NORMALIZED)
VR = 2.0 Vdc
VR = 4.0 Vdc
f = 1.0 MHz
20
30
50 70 100
200 300
-50
-25
0
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Figure of Merit versus Frequency
10 5 I R , REVERSE CURRENT (nA) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 TA = 25C 2 4 6 TA = 75C TA = 125C
Figure 4. Diode Capacitance versus Temperature
8
10
12
14
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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MMBV432LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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MMBV432LT1
PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A L
3 1 2
BS
V
G C D H K J
STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MMBV432LT1/D

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